IPD110N12N3GATMA1
ActivePOWER MOSFET, N CHANNEL, 120 V, 75 A, 0.0092 OHM, TO-252 (DPAK), SURFACE MOUNT
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IPD110N12N3GATMA1
ActivePOWER MOSFET, N CHANNEL, 120 V, 75 A, 0.0092 OHM, TO-252 (DPAK), SURFACE MOUNT
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Technical Specifications
Parameters and characteristics for this part
| Specification | IPD110N12N3GATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 75 A |
| Drain to Source Voltage (Vdss) | 120 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 65 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 4310 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-63, DPAK (2 Leads + Tab), TO-252-3 |
| Power Dissipation (Max) | 136 W |
| Rds On (Max) @ Id, Vgs [Max] | 11 mOhm |
| Supplier Device Package | PG-TO252-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3 V, 83 µA |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 2.85 | |
| 10 | $ 1.85 | |||
| 100 | $ 1.27 | |||
| 500 | $ 1.03 | |||
| 1000 | $ 0.95 | |||
| Digi-Reel® | 1 | $ 2.85 | ||
| 10 | $ 1.85 | |||
| 100 | $ 1.27 | |||
| 500 | $ 1.03 | |||
| 1000 | $ 0.95 | |||
| Tape & Reel (TR) | 2500 | $ 0.88 | ||
Description
General part information
IPD110 Series
The IPD110N12N3 G is an OptiMOS™ N-channel Power MOSFET offers at the same time the lowest ON-state resistances of the industry and the fastest switching behaviour, allowing for the achievement of outstanding performance in a wide range of applications. The 120V OptiMOS™ technology gives new possibilities for optimized solutions.
Documents
Technical documentation and resources