IX6R11S6

Obsolete

IXYS

IC GATE DRVR HALF-BRIDGE 18SOIC

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Obsolete

IXYS

IC GATE DRVR HALF-BRIDGE 18SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	IX6R11S6

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	6 A
Current - Peak Output (Source, Sink) [custom]	6 A
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH [custom]	9.6 V
Logic Voltage - VIL, VIH [custom]	6 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	125 °C
Operating Temperature [Min]	-40 °C
Package / Case	18-SOIC
Package / Case [y]	0.295 in
Package / Case [y]	7.5 mm
Rise / Fall Time (Typ) [custom]	25 ns
Rise / Fall Time (Typ) [custom]	17 ns
Supplier Device Package	18-SOIC
Voltage - Supply [Max]	35 V
Voltage - Supply [Min]	10 VDC

Part	Channel Type	Supplier Device Package	Number of Drivers	Operating Temperature [Min]	Operating Temperature [Max]	Logic Voltage - VIL, VIH [custom]	Logic Voltage - VIL, VIH [custom]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Voltage - Supply [Min]	Voltage - Supply [Max]	Mounting Type	Package / Case [x]	Package / Case	Package / Case [y]	High Side Voltage - Max (Bootstrap) [Max]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Driven Configuration	Input Type	Gate Type	Logic Voltage - VIL, VIH [Max]	Logic Voltage - VIL, VIH [Min]	Package / Case [y]
IXYS IX6R11S3	Independent	16-SOIC	2	-40 °C	125 °C	9.6 V	6 V	25 ns	17 ns	10 VDC	35 V	Surface Mount	0.295 in	16-SOIC	7.5 mm	600 V	6 A	6 A	Half-Bridge	Non-Inverting	IGBT N-Channel MOSFET
IXYS IX6R11M6T/R	Independent	16-MLP (7x6)	2	-40 °C	125 °C			25 ns	17 ns	10 VDC	35 V	Surface Mount		16-VDFN Exposed Pad		600 V			Half-Bridge	Non-Inverting	IGBT N-Channel MOSFET	9.5 V	6 V
IXYS IX6R11S6	Independent	18-SOIC	2	-40 °C	125 °C	9.6 V	6 V	25 ns	17 ns	10 VDC	35 V	Surface Mount		18-SOIC	0.295 in	600 V	6 A	6 A	Half-Bridge	Non-Inverting	IGBT N-Channel MOSFET			7.5 mm
IXYS IX6R11S6T/R	Independent	18-SOIC	2	-40 °C	125 °C	9.6 V	6 V	25 ns	17 ns	10 VDC	35 V	Surface Mount		18-SOIC	0.295 in	600 V	6 A	6 A	Half-Bridge	Non-Inverting	IGBT N-Channel MOSFET			7.5 mm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Half-Bridge Gate Driver IC Non-Inverting 18-SOIC

Technical documentation and resources

No documents available