BCP5610H6327XTSA1

Infineon Technologies

TRANS GP BJT NPN 80V 1A 2000MW AUTOMOTIVE AEC-Q101 4-PIN(3+TAB) SOT-223 T/R

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Infineon Technologies

TRANS GP BJT NPN 80V 1A 2000MW AUTOMOTIVE AEC-Q101 4-PIN(3+TAB) SOT-223 T/R

Technical Specifications

Parameters and characteristics for this part

Specification	BCP5610H6327XTSA1

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	63 hFE
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-261AA, TO-261-4
Power - Max [Max]	2 W
Supplier Device Package	PG-SOT223-4-10
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

Part	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Package / Case	Mounting Type	Current - Collector (Ic) (Max) [Max]	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature
Infineon Technologies BCP5610H6327XTSA1	100 MHz	500 mV	100 nA	TO-261-4 TO-261AA	Surface Mount	1 A	NPN	80 V	PG-SOT223-4-10	2 W	63 hFE	150 °C
Infineon Technologies BCP5616E6327HTSA1	100 MHz	500 mV	100 nA	TO-261-4 TO-261AA	Surface Mount	1 A	NPN	80 V	PG-SOT223-4-10	2 W	100	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor NPN 80 V 1 A 100MHz 2 W Surface Mount PG-SOT223-4-10

Technical documentation and resources