BAW101E6327HTSA1

Infineon Technologies

DIODE ARRAY GP 300V 250MA SOT143

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Infineon Technologies

DIODE ARRAY GP 300V 250MA SOT143

Technical Specifications

Parameters and characteristics for this part

Specification	BAW101E6327HTSA1

Current - Average Rectified (Io) (per Diode)	250 mA
Current - Reverse Leakage @ Vr	150 nA
Diode Configuration	2 Independent
Mounting Type	Surface Mount
Operating Temperature - Junction	150 °C
Package / Case	TO-253-4, TO-253AA
Reverse Recovery Time (trr)	1 µs
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	PG-SOT-143-3D
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	300 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.3 V

Part	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Package / Case	Current - Average Rectified (Io) (per Diode)	Operating Temperature - Junction	Speed	Speed	Diode Configuration	Supplier Device Package	Mounting Type	Voltage - Forward (Vf) (Max) @ If [Max]	Technology	Voltage - DC Reverse (Vr) (Max) [Max]
Infineon Technologies BAW101E6327HTSA1	1 µs	150 nA	TO-253-4 TO-253AA	250 mA	150 °C	Standard Recovery >500ns	200 mA	2 Independent	PG-SOT-143-3D	Surface Mount	1.3 V	Standard	300 V
Infineon Technologies BAW101E6433HTMA1	1 µs	150 nA	TO-253-4 TO-253AA	250 mA	150 °C	Standard Recovery >500ns	200 mA	2 Independent	PG-SOT-143-3D	Surface Mount	1.3 V	Standard	300 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 2 Independent 300 V 250mA (DC) Surface Mount TO-253-4, TO-253AA

Technical documentation and resources