LND250K1-G
ActiveMOSFET, DEPLETION-MODE, 500V, 1K OHM 3 SOT-23 1.3MM T/R ROHS COMPLIANT: YES
LND250K1-G
ActiveMOSFET, DEPLETION-MODE, 500V, 1K OHM 3 SOT-23 1.3MM T/R ROHS COMPLIANT: YES
Description
General part information
LND250 Series
The LND250 is a high voltage N-channel depletion mode (normally-on) transistor utilizing lateral DMOS technology. The gate is ESD protected.
The LND250 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification.
Technical Specifications
Parameters and characteristics for this part
| Specification | LND250K1-G |
|---|---|
| Current - Continuous Drain (Id) (Tj) | 13 mA |
| Drain to Source Voltage (Vdss) | 500 V |
| Drive Voltage (Max Rds On, Min Rds On) | 0 V |
| FET Feature | Depletion Mode |
| FET Type | Depletion Mode, N-Channel |
| Input Capacitance (Ciss) (Max) | 10 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-236-3, SOT-23-3, SC-59 |
| Package Name | SOT-23 (TO-236AB) |
| Power Dissipation (Max) | 360 mW |
| Rds On (Max) | 1000 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
Pricing
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CAD
3D models and CAD resources for this part