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R6003JND4TL1

R6003JND4TL1

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Rohm Semiconductor

600V 1.3A SOT-223-3, PRESTOMOS™ WITH INTEGRATED HIGH-SPEED DIODE

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R6003JND4TL1

R6003JND4TL1

Active
Rohm Semiconductor

600V 1.3A SOT-223-3, PRESTOMOS™ WITH INTEGRATED HIGH-SPEED DIODE

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Description

General part information

R6003JND4 Series

R6003JND4 is a power MOSFET with fast reverse recovery time (trr), suitable for the switching applications.PrestoMOS™ series, R60xxJNx series increases design flexibility while maintaining the industry’s fastest reverse recovery time (trr) optimized for EV charging stations and motor drive in home appliances such as refrigerators and Air Conditioners (ACs).

Technical Specifications

Parameters and characteristics for this part

SpecificationR6003JND4TL1
Current - Continuous Drain (Id) (Tc)1.3 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)15 V
FET TypeN-Channel
Gate Charge (Max)8 nC, 8 nC
Input Capacitance (Ciss) (Max)180 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseTO-261-3
Package NameSOT-223-3
Power Dissipation (Max)7.8 W
Rds On (Max)2.15 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max)7 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Notes for Calculating Power Consumption:Static Operation
About Flammability of Materials
Types and Features of Transistors
Benefits given by PrestoMOS™ series for the Phase-Shift Full-Bridge
Method for Monitoring Switching Waveform
What Is Thermal Design
Part Explanation
Anti-Whisker formation - Transistors
θ<sub>JA</sub> and Ψ<sub>JT</sub>
Method for Calculating Junction Temperature from Transient Thermal Resistance Data
How to Use LTspice&reg; Models
θ<sub>JC</sub> and Ψ<sub>JT</sub>
Judgment Criteria of Thermal Evaluation
Calculation of Power Dissipation in Switching Circuit
PCB Layout Thermal Design Guide
MOSFET Gate Drive Current Setting for Motor Driving
List of Transistor Package Thermal Resistance
Basics of Thermal Resistance and Heat Dissipation
MOSFET Gate Resistor Setting for Motor Driving
How to Use the Thermal Resistance and Thermal Characteristics Parameters
Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)
R6003JND4 Data Sheet
Super Junction MOSFET in the SOT-223-3 Package
Importance of Probe Calibration When Measuring Power: Deskew
Compliance of the RoHS directive
Precautions When Measuring the Rear of the Package with a Thermocouple
What is a Thermal Model? (Transistor)
Moisture Sensitivity Level - Transistors
Notes for Temperature Measurement Using Forward Voltage of PN Junction
Measurement Method and Usage of Thermal Resistance RthJC
Two-Resistor Model for Thermal Simulation
About Export Regulations
Impedance Characteristics of Bypass Capacitor
How to Use LTspice&reg; Models: Tips for Improving Convergence
Power Eco Family: Overview of ROHM's Power Semiconductor Lineup
Temperature derating method for Safe Operating Area (SOA)
Notes for Temperature Measurement Using Thermocouples