ALD110900APAL

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Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8PDIP

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Advanced Linear Devices Inc.

MOSFET 2N-CH 10.6V 8PDIP

Technical Specifications

Parameters and characteristics for this part

Specification	ALD110900APAL

Configuration	2 N-Channel (Dual) Matched Pair
Drain to Source Voltage (Vdss)	10.6 V
Input Capacitance (Ciss) (Max) @ Vds	2.5 pF
Mounting Type	Through Hole
Operating Temperature [Max]	70 °C
Operating Temperature [Min]	0 °C
Package / Case	0.3 in
Package / Case	8-DIP
Package / Case	7.62 mm
Power - Max [Max]	500 mW
Rds On (Max) @ Id, Vgs	500 Ohm
Supplier Device Package	8-PDIP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	10 mV

MOSFET 2N-CH 10.6V 8PDIP

Part	Drain to Source Voltage (Vdss)	Package / Case	Package / Case	Package / Case	Mounting Type	Power - Max [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Technology	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Configuration	Supplier Device Package
Advanced Linear Devices Inc. ALD110900APAL	10.6 V	0.3 in	8-DIP	7.62 mm	Through Hole	500 mW	10 mV	2.5 pF	MOSFET (Metal Oxide)	500 Ohm	70 °C	0 °C	2 N-Channel (Dual) Matched Pair	8-PDIP

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General part information

Mosfet Array 10.6V 500mW Through Hole 8-PDIP

Technical documentation and resources