ALD110900APAL
ActiveAdvanced Linear Devices Inc.
MOSFETS DUAL EPAD(R) N-CH
ALD110900APAL
ActiveAdvanced Linear Devices Inc.
MOSFETS DUAL EPAD(R) N-CH
Description
General part information
ALD110900 Series
Mosfet Array 10.6V 500mW Through Hole 8-PDIP
Technical Specifications
Parameters and characteristics for this part
| Specification | ALD110900APAL |
|---|---|
| Channel Count | 2 |
| Configuration | Matched Pair, N-Channel |
| Configuration - Features | Dual |
| Drain to Source Voltage (Vdss) | 10.6 V |
| Input Capacitance (Ciss) (Max) | 2.5 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 70 °C |
| Operating Temperature (Min) | 0 °C |
| Package Length | 0.3 in |
| Package Name | 8-PDIP, 8-DIP |
| Package Width | 7.62 mm |
| Power - Max | 0.5 W |
| Rds On (Max) | 500 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 10 mV |
Pricing
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CAD
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