IPAN70R900P7SXKSA1

Obsolete

Infineon Technologies

MOSFET N-CH 700V 6A TO220

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Obsolete

Infineon Technologies

MOSFET N-CH 700V 6A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	IPAN70R900P7SXKSA1

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	700 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	6.8 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	211 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	17.9 W
Rds On (Max) @ Id, Vgs	900 mOhm
Supplier Device Package	PG-TO220-FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	16 V
Vgs(th) (Max) @ Id	3.5 V

Part	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Mounting Type	Vgs(th) (Max) @ Id	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Power Dissipation (Max)	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Technology
Infineon Technologies IPAN70R900P7SXKSA1	TO-220-3 Full Pack	6.8 nC	700 V	211 pF	Through Hole	3.5 V	150 °C	-40 °C	N-Channel	17.9 W	16 V	6 A	900 mOhm	PG-TO220-FP	10 V	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 700 V 6A (Tc) 17.9W (Tc) Through Hole PG-TO220-FP

Technical documentation and resources

No documents available