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STTH1210DI - STMICROELECTRONICS STTH1210DI

STTH1210DI

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STMicroelectronics

FAST / ULTRAFAST DIODE, 1 KV, 12 A, SINGLE, 1.6 V, 48 NS, 80 A

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STTH1210DI - STMICROELECTRONICS STTH1210DI

STTH1210DI

Active
STMicroelectronics

FAST / ULTRAFAST DIODE, 1 KV, 12 A, SINGLE, 1.6 V, 48 NS, 80 A

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTTH1210DI
Current - Average Rectified (Io)12 A
Current - Reverse Leakage @ Vr10 çA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 °C
Reverse Recovery Time (trr)90 ns
Speed200 mA, 500 ns
Supplier Device PackageTO-220AC ins
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]1000 V
Voltage - Forward (Vf) (Max) @ If2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
ArrowN/A 1000$ 1.13
DigikeyTube 1$ 1.47
50$ 1.18
100$ 0.93
500$ 0.79
1000$ 0.64
2000$ 0.61
5000$ 0.58
10000$ 0.55

Description

General part information

STTH1210 Series

The high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability.

Such demanding applications include industrial power supplies, motor control, and similar mission-critical systems that require rectification and freewheeling. These diodes also fit into auxiliary functions such as snubber, bootstrap, and demagnetization applications.

The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device.