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M93S56-WMN6P - 8-SOIC

M93S56-WMN6P

Active
STMicroelectronics

EEPROM SERIAL-MICROWIRE 2K-BIT 128 X 16 3.3V/5V 8-PIN SO N TRAY

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M93S56-WMN6P - 8-SOIC

M93S56-WMN6P

Active
STMicroelectronics

EEPROM SERIAL-MICROWIRE 2K-BIT 128 X 16 3.3V/5V 8-PIN SO N TRAY

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationM93S56-WMN6P
Clock Frequency2 MHz
Memory FormatEEPROM
Memory InterfaceSPI
Memory Organization128 x 16
Memory Size256 B
Memory TypeNon-Volatile
Mounting TypeSurface Mount
Operating Temperature [Max]85 °C
Operating Temperature [Min]-40 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Supplier Device Package8-SOIC
TechnologyEEPROM
Voltage - Supply [Max]5.5 V
Voltage - Supply [Min]2.5 V
Write Cycle Time - Word, Page5 ms

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 0.44
10$ 0.40
25$ 0.40
50$ 0.39
100$ 0.35
300$ 0.35
NewarkEach 1$ 0.43
10$ 0.40
100$ 0.40
500$ 0.40
1000$ 0.40
4000$ 0.40

Description

General part information

M93S56 Series

The M93S66-125, M93S56-125 and M93S46-125 are a range of 4-Kbit, 2-Kbit, and 1-Kbit serial Electrically Erasable PROgrammable Memory (EEPROM) products. They are collectively referred to as M93Sx6-125.Industry standard MICROWIRETMbusSingle supply voltage: 2.5 to 5.5 VSingle organization: by word (x16)Programming instructions that work on: word or entire memorySelf-timed programming cycle with auto-eraseUser-defined write-protected areaPage Write mode (4 words)Ready/Busy signal during programmingSpeed: 2-MHz clock rate,Sequential Read operationEnhanced ESD/Latch-up behaviorMore than 1 million Erase/Write cyclesMore than 40-year data retention

Documents

Technical documentation and resources