
PSMN1R1-30EL,127
ObsoleteNexperia USA Inc.
MOSFET N-CH 30V 120A I2PAK

PSMN1R1-30EL,127
ObsoleteNexperia USA Inc.
MOSFET N-CH 30V 120A I2PAK
Description
General part information
PSMN1R1 Series
Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.
Technical Specifications
Parameters and characteristics for this part
| Specification | PSMN1R1-30EL,127 |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 120 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 243 nC |
| Input Capacitance (Ciss) (Max) | 14850 pF |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | TO-262AA, I2PAK, TO-262-3 Long Leads |
| Package Name | I2PAK |
| Power Dissipation (Max) | 338 W |
| Rds On (Max) | 1.3 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.2 V |
Pricing
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