IPW60R105CFD7XKSA1
ActiveCOOLMOS™ CFD7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 105 MOHM; FAST RECOVERY DIODE
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IPW60R105CFD7XKSA1
ActiveCOOLMOS™ CFD7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-247 PACKAGE; 105 MOHM; FAST RECOVERY DIODE
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Technical Specifications
Parameters and characteristics for this part
| Specification | IPW60R105CFD7XKSA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 21 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 1752 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power Dissipation (Max) | 106 W |
| Rds On (Max) @ Id, Vgs | 105 mOhm |
| Supplier Device Package | PG-TO247-3-41 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPW60R105 Series
The600V CoolMOS™ CFD7is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behavior and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.
Documents
Technical documentation and resources