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Description

General part information

2N5152 Series

This specification covers the performance requirements for NPN, silicon, power, 2N5152 and 2N5154 transistors, complimentary to the 2N5151 and 2N5153 transistors for use in high-speed power-switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device as specified in MIL-PRF-19500/544. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to eight radiation levels ("M", "D", "P", "L", "R", "F", "G", and "H") are provided for JANTXV and JANS product assurance levels.

Technical Specifications

Parameters and characteristics for this part

Specification2N5152
Current - Collector (Ic) (Max)2 A
Current - Collector Cutoff (Max)50 µA
DC Current Gain (hFE) (Min)30
Mounting TypeThrough Hole
Operating Temperature (Max)200 °C
Operating Temperature (Min)-65 °C
Package / CaseTO-39-3 Metal Can, TO-205AD
Package NameTO-39
Power - Max1 VA
Transistor TypeNPN
Vce Saturation (Max)1.5 V
Voltage - Collector Emitter Breakdown (Max)80 V

Pricing

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