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9 QFN

MP1921HQE-A-LF-Z

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Monolithic Power Systems Inc.

MOSFET DRVR 2.5A/3.5A 1-OUT HI/LO SIDE NON-INV 9-PIN QFN T/R

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9 QFN

MP1921HQE-A-LF-Z

Active
Monolithic Power Systems Inc.

MOSFET DRVR 2.5A/3.5A 1-OUT HI/LO SIDE NON-INV 9-PIN QFN T/R

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Description

General part information

MP1921 Series

The MP1921A is a high-frequency, 100V, half bridge, N-channel power MOSFET driver. Its low side and high side driver channels are independently controlled and matched with a time delay of less than 5ns. Under-voltage lockout on both high side and low side supplies force their outputs low in case of insufficient supply. The integrated bootstrap diode reduces external component count.Drives N-Channel MOSFET Half Bridge 120V VBST Voltage Range On-Chip Bootstrap Diode Typical 16ns Propagation Delay Time Less Than 5ns Gate Drive Matching Drives 1nf Load with 12ns/9ns Rise/Fall Times with 12V VDD TTL Compatible Input Less Than 150uA Quiescent Current UVLO for Both High Side and Low Side In SOIC8E, SOIC-8, 3×3mm QFN8, 3×3mm QFN9 and 4x4mm QFN10 Packages

Technical Specifications

Parameters and characteristics for this part

SpecificationMP1921HQE-A-LF-Z
Channel TypeIndependent
Current - Peak Output (Sink)2.5 A
Current - Peak Output (Source)2.5 A
Driven ConfigurationHalf-Bridge
Fall Time (Typ)9 ns
Gate ChannelN-Channel
Gate TypeN-Channel MOSFET, MOSFET
High Side Voltage - Max (Bootstrap)120 V
Input TypeNon-Inverting
Logic Voltage - VIH2.4 V
Logic Voltage - VIL1 V
Mounting TypeSurface Mount
Number of Drivers2
Operating Temperature (Max)125 °C
Operating Temperature (Min)-40 °C
Package / Case9-VFDFN Exposed Pad
Package Length3 mm
Package Name9-QFN
Package Width3 mm
Rise Time (Typ)12 ns
Voltage - Supply (Maximum)18 V
Voltage - Supply (Minimum)9 VDC

Pricing

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CAD

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Documents

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