JAN2N3584
UnknownMicrochip Technology
NPN SILICON HIGH-POWER 250V TO 300V, 2A
JAN2N3584
UnknownMicrochip Technology
NPN SILICON HIGH-POWER 250V TO 300V, 2A
Description
General part information
JAN2N3584-Transistor Series
This specification covers the performance requirements for NPN, silicon, power, 2N3584 and 2N3585 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for this device type as specified in MIL-PRF-19500/384. The device package for the encapsulated device type are as follows: (TO-66).
Technical Specifications
Parameters and characteristics for this part
| Specification | JAN2N3584 |
|---|---|
| Current - Collector (Ic) (Max) | 2 A |
| Current - Collector Cutoff (Max) | 5 mA |
| DC Current Gain (hFE) (Min) | 25 |
| Grade | Military |
| Mounting Type | Through Hole |
| Operating Temperature (Max) | 200 °C |
| Operating Temperature (Min) | -65 °C |
| Package / Case | TO-66-2, TO-213AA |
| Package Name | TO-66 (TO-213AA) |
| Power - Max | 2.5 VA |
| Qualification | MIL-PRF-19500, 384 |
| Supplier Device Package | TO-66, TO-213AA |
| Transistor Type | NPN |
| Vce Saturation (Max) | 750 mV |
| Voltage - Collector Emitter Breakdown (Max) | 250 V |
Pricing
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