IXTU12N06T

Obsolete

IXYS

MOSFET N-CH 60V 12A TO251

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Obsolete

IXYS

MOSFET N-CH 60V 12A TO251

Technical Specifications

Parameters and characteristics for this part

Specification	IXTU12N06T

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	3.4 nC
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max) [Max]	33 W
Rds On (Max) @ Id, Vgs [Max]	85 mOhm
Supplier Device Package	TO-251AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Technology	Current - Continuous Drain (Id) @ 25°C	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs [Max]	FET Type	Vgs(th) (Max) @ Id	Mounting Type
IXYS IXTU12N06T	10 V	20 V	33 W	60 V	3.4 nC	TO-251AA	MOSFET (Metal Oxide)	12 A	IPAK TO-251-3 Short Leads TO-251AA	-55 °C	175 ░C	85 mOhm	N-Channel	4 V	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 12A (Tc) 33W (Tc) Through Hole TO-251AA

Technical documentation and resources