S15JLWHRVG

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Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1.5A SOD123W

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Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1.5A SOD123W

Technical Specifications

Parameters and characteristics for this part

Specification	S15JLWHRVG

Capacitance @ Vr, F	10 pF
Current - Average Rectified (Io)	1.5 A
Current - Reverse Leakage @ Vr	1 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	SOD-123W
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	SOD-123W
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Speed	Speed	Technology	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Supplier Device Package	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Grade	Qualification
Taiwan Semiconductor Corporation S15JLWHRVG	Standard Recovery >500ns	200 mA	Standard	1 µA	600 V	SOD-123W	SOD-123W	10 pF	1.1 V	Surface Mount	175 ░C	-55 C	1.5 A
Taiwan Semiconductor Corporation S15JLW RVG	Standard Recovery >500ns	200 mA	Standard	1 µA	600 V	SOD-123W	SOD-123W	10 pF	1.1 V	Surface Mount	175 ░C	-55 C	1.5 A
Taiwan Semiconductor Corporation S15JCHM6G	Standard Recovery >500ns	200 mA	Standard	1 µA	600 V	DO-214AB SMC	DO-214AB (SMC)	93 pF	1.1 V	Surface Mount	150 °C	-55 °C	15 A	Automotive	AEC-Q101

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 1.5A Surface Mount SOD-123W

Technical documentation and resources