IQDH45N04LM6CGATMA1
Active40 V MOSFET PQFN 5X6MM2 SOURCE DOWN PACKAGE WITH INDUSTRY-LEADING RDS(ON).
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IQDH45N04LM6CGATMA1
Active40 V MOSFET PQFN 5X6MM2 SOURCE DOWN PACKAGE WITH INDUSTRY-LEADING RDS(ON).
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Technical Specifications
Parameters and characteristics for this part
| Specification | IQDH45N04LM6CGATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 60 A, 637 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 129 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 12000 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 9-PowerTDFN |
| Power Dissipation (Max) | 3 W, 333 W |
| Rds On (Max) @ Id, Vgs | 0.45 mOhm |
| Supplier Device Package | PG-TTFN-9-U02 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 3.71 | |
| 10 | $ 3.33 | |||
| 25 | $ 3.15 | |||
| 100 | $ 2.73 | |||
| 250 | $ 2.59 | |||
| 500 | $ 2.32 | |||
| 1000 | $ 1.96 | |||
| 2500 | $ 1.86 | |||
| Digi-Reel® | 1 | $ 3.71 | ||
| 10 | $ 3.33 | |||
| 25 | $ 3.15 | |||
| 100 | $ 2.73 | |||
| 250 | $ 2.59 | |||
| 500 | $ 2.32 | |||
| 1000 | $ 1.96 | |||
| 2500 | $ 1.86 | |||
| Tape & Reel (TR) | 5000 | $ 1.79 | ||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 3.28 | |
| 10 | $ 2.46 | |||
| 25 | $ 2.26 | |||
| 50 | $ 2.14 | |||
| 100 | $ 2.03 | |||
| 250 | $ 1.92 | |||
| 500 | $ 1.85 | |||
| 1000 | $ 1.80 | |||
Description
General part information
IQDH45 Series
The power MOSFET IQDH45N04LM6CG 40 V comes in a PQFN 5x6 mm2Source-Downpackage. The part offers a very low RDS(ON)of 0.45 mΩ combined with outstanding thermal performance for easy power loss management. This enables higher system efficiency and power density for a large variety of end applications likebattery-powered tools,SMPS,telecompower, and intermediate bus conversion in high-performance computing, like hyper-scale data centers and AI-server farms.
Documents
Technical documentation and resources