DMP2007UFG-13

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Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 18A I(D), 20V, 0.007OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET,

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Active

Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 18A I(D), 20V, 0.007OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET,

Technical Specifications

Parameters and characteristics for this part

Specification	DMP2007UFG-13

Current - Continuous Drain (Id) @ 25°C	18 A, 40 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	85 nC
Input Capacitance (Ciss) (Max) @ Vds	4621 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	2.3 W
Rds On (Max) @ Id, Vgs	5.5 mOhm
Supplier Device Package	POWERDI3333-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.3 V

20V P-Channel Enhancement Mode MOSFET

Part	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Technology	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	FET Type	Supplier Device Package	Mounting Type	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Vgs (Max)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)
Diodes Inc DMP2007UFG-13	4621 pF	5.5 mOhm	18 A 40 A	MOSFET (Metal Oxide)	8-PowerVDFN	-55 °C	150 °C	85 nC	1.3 V	P-Channel	POWERDI3333-8	Surface Mount	10 V	2.5 V	12 V	2.3 W	20 V

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