IXFC80N08

Obsolete

IXYS

MOSFET N-CH 80V 80A ISOPLUS220

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Obsolete

IXYS

MOSFET N-CH 80V 80A ISOPLUS220

Technical Specifications

Parameters and characteristics for this part

Specification	IXFC80N08

Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	180 nC
Input Capacitance (Ciss) (Max) @ Vds	4800 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	ISOPLUS220™
Power Dissipation (Max) [Max]	230 W
Rds On (Max) @ Id, Vgs	11 mOhm
Supplier Device Package	ISOPLUS220™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	4 V

Part	Technology	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Power Dissipation (Max) [Max]	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Package / Case	Vgs(th) (Max) @ Id [Max]
IXYS IXFC80N08	MOSFET (Metal Oxide)	4800 pF	N-Channel	230 W	Through Hole	-55 °C	150 °C	11 mOhm	80 V	10 V	20 V	180 nC	ISOPLUS220™	ISOPLUS220™	4 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 80 V 80A (Tc) 230W (Tc) Through Hole ISOPLUS220™

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