AUIRL7736M2TR
ActiveAUIRL7736M2TR IS AN AUTOMOTIVE MOSFET OFFERING 40V, N-CH, 3 MΩ MAX, DIRECTFET M4, GEN 10.7 FOR HIGH EFFICIENCY AND POWER DENSITY IN AUTOMOTIVE APPLICATIONS.
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AUIRL7736M2TR
ActiveAUIRL7736M2TR IS AN AUTOMOTIVE MOSFET OFFERING 40V, N-CH, 3 MΩ MAX, DIRECTFET M4, GEN 10.7 FOR HIGH EFFICIENCY AND POWER DENSITY IN AUTOMOTIVE APPLICATIONS.
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Technical Specifications
Parameters and characteristics for this part
| Specification | AUIRL7736M2TR |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 179 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 78 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 5055 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | DirectFET™ Isometric M4 |
| Power Dissipation (Max) | 63 W, 2.5 W |
| Rds On (Max) @ Id, Vgs [Max] | 3 mOhm |
| Supplier Device Package | DirectFET™ Isometric M4 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 16 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 163 | $ 1.85 | |
| 163 | $ 1.85 | |||
| Cut Tape (CT) | 1 | $ 4.42 | ||
| 1 | $ 4.42 | |||
| 10 | $ 2.92 | |||
| 10 | $ 2.92 | |||
| 100 | $ 2.07 | |||
| 100 | $ 2.07 | |||
| 500 | $ 1.71 | |||
| 500 | $ 1.71 | |||
| 1000 | $ 1.60 | |||
| 1000 | $ 1.60 | |||
| Digi-Reel® | 1 | $ 4.42 | ||
| 1 | $ 4.42 | |||
| 10 | $ 2.92 | |||
| 10 | $ 2.92 | |||
| 100 | $ 2.07 | |||
| 100 | $ 2.07 | |||
| 500 | $ 1.71 | |||
| 500 | $ 1.71 | |||
| 1000 | $ 1.60 | |||
| 1000 | $ 1.60 | |||
| Tape & Reel (TR) | 4800 | $ 1.60 | ||
| 4800 | $ 1.60 | |||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 2.40 | |
Description
General part information
AUIRL7736 Series
The AUIRL7736M2 combines the latest Automotive HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging technology to achieve exceptional performance in a package that has the footprint of an SO-8 or 5X6mm PQFN and only 0.7mm profile. The DirectFET® package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in automotive power systems. This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced DirectFET® packaging platform coupled with the latest silicon technology allows the AUIRL7736M2 to offer substantial system level savings and performance improvement specifically in high frequency DC-DC, motor drive and other heavy load applications on ICE, HEV and EV platforms. The AUIRL7736M2 can be utilized together with the AUIRL7732S2 as a sync/control MOSFET pair in a buck converter topology. This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current automotive applications.
Documents
Technical documentation and resources