IXTA15N50L2

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IXYS

MOSFET N-CH 500V 15A TO263

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IXYS

MOSFET N-CH 500V 15A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	IXTA15N50L2

Current - Continuous Drain (Id) @ 25°C	15 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	123 nC
Input Capacitance (Ciss) (Max) @ Vds	4080 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs	480 mOhm
Supplier Device Package	TO-263AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Package / Case	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Technology	Mounting Type	Vgs (Max)	Power Dissipation (Max)
IXYS IXTA15N50L2	123 nC	N-Channel	500 V	-55 °C	150 °C	4080 pF	300 W	4.5 V	TO-263AA	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	480 mOhm	10 V	15 A	MOSFET (Metal Oxide)	Surface Mount	20 V
IXYS IXTA15P15T	48 nC	P-Channel	150 V	-55 °C	150 °C	3650 pF		4.5 V	TO-263AA	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	240 mOhm	10 V	15 A	MOSFET (Metal Oxide)	Surface Mount	15 V	150 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 500 V 15A (Tc) 300W (Tc) Surface Mount TO-263AA

Technical documentation and resources