SPP24N60C3HKSA1

Obsolete

Infineon Technologies

MOSFET N-CH 650V 24.3A TO220-3

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Obsolete

Infineon Technologies

MOSFET N-CH 650V 24.3A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	SPP24N60C3HKSA1

Current - Continuous Drain (Id) @ 25°C	24.3 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	135 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	240 W
Rds On (Max) @ Id, Vgs	160 mOhm
Supplier Device Package	PG-TO220-3-1
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Part	Mounting Type	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Technology	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]
Infineon Technologies SPP24N60C3HKSA1	Through Hole	240 W	24.3 A	TO-220-3	160 mOhm	10 V	N-Channel	MOSFET (Metal Oxide)	PG-TO220-3-1	135 nC	20 V	650 V	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 650 V 24.3A (Tc) 240W (Tc) Through Hole PG-TO220-3-1

Technical documentation and resources

No documents available