STGF7NC60HD

Obsolete

STMicroelectronics

IGBT 600V 10A 25W TO220FP

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

STGF7NC60HD

Obsolete

STMicroelectronics

IGBT 600V 10A 25W TO220FP

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STGF7NC60HD

Current - Collector Pulsed (Icm)	50 A
Gate Charge	35 nC
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power - Max [Max]	25 W
Reverse Recovery Time (trr)	37 ns
Supplier Device Package	TO-220FP
Switching Energy	115 µJ, 95 µJ
Td (on/off) @ 25°C	18.5 ns
Td (on/off) @ 25°C	72 ns
Test Condition	7 A, 10 Ohm, 15 V, 390 V
Vce(on) (Max) @ Vge, Ic	2.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

STGF7H60DF Series

Trench gate field-stop IGBT, H series 600 V, 7 A high speed

Part	Supplier Device Package	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Voltage - Collector Emitter Breakdown (Max) [Max]	Test Condition	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Reverse Recovery Time (trr)	Power - Max [Max]	Vce(on) (Max) @ Vge, Ic	IGBT Type	Switching Energy	Current - Collector Pulsed (Icm)	Current - Collector (Ic) (Max) [Max]	Package / Case	Gate Charge
STMicroelectronics STGF7H60DF	TO-220FP	30 ns	160 ns	600 V	7 A 15 V 47 Ohm 400 V	-55 °C	175 ░C	Through Hole	136 ns	24 W	1.95 V	Trench Field Stop	99 µJ 100 µJ	28 A	14 A	TO-220-3 Full Pack	46 nC
STMicroelectronics STGF7NC60HD	TO-220FP	18.5 ns	72 ns	600 V	7 A 10 Ohm 15 V 390 V	-55 °C	150 °C	Through Hole	37 ns	25 W	2.5 V		95 µJ 115 µJ	50 A		TO-220-3 Full Pack	35 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

STGF7H60DF Series

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT series offers the optimum compromise between conduction and switching losses, maximizing the efficiency of very high frequency converters. Furthermore, a positive VCE(sat)temperature coefficient and very tight parameter distribution result in easier paralleling operation.

Documents

Technical documentation and resources