1N486B TR TIN/LEAD

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Central Semiconductor Corp

DIODE GEN PURP 250V 200MA DO35

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Central Semiconductor Corp

DIODE GEN PURP 250V 200MA DO35

Technical Specifications

Parameters and characteristics for this part

Specification	1N486B TR TIN/LEAD

Current - Average Rectified (Io)	200 mA
Current - Reverse Leakage @ Vr	50 nA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	200 C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Axial, DO-35, DO-204AH
Speed	Any Speed
Speed	200 mA
Supplier Device Package	DO-35
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	250 V
Voltage - Forward (Vf) (Max) @ If	1 V

DIODE GEN PURP 250V 200MA DO35

Part	Voltage - Forward (Vf) (Max) @ If	Speed	Speed	Current - Average Rectified (Io)	Mounting Type	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package
Central Semiconductor Corp 1N486B TR TIN/LEAD	1 V	Any Speed	200 mA	200 mA	Through Hole	50 nA	200 C	-65 C	Standard	Axial, DO-204AH, DO-35	250 V	DO-35

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General part information

Diode 250 V 200mA Through Hole DO-35

Technical documentation and resources