IPI020N06NAKSA1

Obsolete

Infineon Technologies

MOSFET N-CH 60V 29A/120A TO262

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Obsolete

Infineon Technologies

MOSFET N-CH 60V 29A/120A TO262

Technical Specifications

Parameters and characteristics for this part

Specification	IPI020N06NAKSA1

Current - Continuous Drain (Id) @ 25°C	120 A, 29 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	106 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	7800 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	3 W, 214 W
Rds On (Max) @ Id, Vgs	2 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.8 V

Part	Mounting Type	Vgs(th) (Max) @ Id	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Technology	Gate Charge (Qg) (Max) @ Vgs	FET Type	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)
Infineon Technologies IPI020N06NAKSA1	Through Hole	2.8 V	20 V	-55 °C	175 ░C	I2PAK TO-262-3 Long Leads TO-262AA	2 mOhm	6 V 10 V	29 A 120 A	MOSFET (Metal Oxide)	106 nC	N-Channel	3 W 214 W	7800 pF	60 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 60 V 29A (Ta), 120A (Tc) 3W (Ta), 214W (Tc) Through Hole PG-TO262-3-1

Technical documentation and resources