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BGA5H1BN6E6327XTSA1 - TSNP-6-2

BGA5H1BN6E6327XTSA1

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Infineon Technologies

LNA, 18.1DB, 2.3GHZ-2.69GHZ, TSNP-6

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BGA5H1BN6E6327XTSA1 - TSNP-6-2

BGA5H1BN6E6327XTSA1

Active
Infineon Technologies

LNA, 18.1DB, 2.3GHZ-2.69GHZ, TSNP-6

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationBGA5H1BN6E6327XTSA1
Current - Supply8.5 mA
Frequency [Max]2.69 GHz
Frequency [Min]2.3 GHz
Gain18.1 dB
Mounting TypeSurface Mount
Noise Figure0.7 dB
P1dB-17 dBm
Package / Case6-XFDFN
RF TypeLTE
Test Frequency2.5 GHz
Voltage - Supply [Max]3.6 V
Voltage - Supply [Min]1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.68
10$ 0.60
25$ 0.54
100$ 0.47
250$ 0.42
500$ 0.37
1000$ 0.29
5000$ 0.26
Digi-Reel® 1$ 0.68
10$ 0.60
25$ 0.54
100$ 0.47
250$ 0.42
500$ 0.37
1000$ 0.29
5000$ 0.26
Tape & Reel (TR) 12000$ 0.25
24000$ 0.24
NewarkEach (Supplied on Cut Tape) 1$ 0.52
10$ 0.40
25$ 0.38
50$ 0.36
100$ 0.34
250$ 0.33
500$ 0.33
1000$ 0.31

Description

General part information

BGA5H1 Series

The BGA5H1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 2300 MHz to 2690 MHz. The LNA provides 18.1 dB gain and 0.7 dB noise figure at a current consumption of 8.5 mA. In bypass mode the LNA provides an insertion loss of 5.2 dB. The BGA5H1BN6 is based upon Infineon Technologies‘ B9HF Silicon Germanium technology. It operates from 1.5 V to 3.6 V supply voltage. The device features a single-line two-state control (bypass- and high gain-mode). OFF-state can be enabled by powering down VCC.

Documents

Technical documentation and resources