FZT653TA

Active

Diodes Inc

POWER BIPOLAR TRANSISTOR, 2A I(C), 100V V(BR)CEO, 1-ELEMENT, NPN, SILICON, PLASTIC/EPOXY, 4 PIN,

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Active

Diodes Inc

POWER BIPOLAR TRANSISTOR, 2A I(C), 100V V(BR)CEO, 1-ELEMENT, NPN, SILICON, PLASTIC/EPOXY, 4 PIN,

Technical Specifications

Parameters and characteristics for this part

Specification	FZT653TA

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	100
Frequency - Transition	175 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-261AA, TO-261-4
Power - Max [Max]	2 W
Supplier Device Package	SOT-223-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	100 V

NPN, 100V, 2A, SOT223

Part	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Transistor Type	Mounting Type	Frequency - Transition	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package
Diodes Inc FZT653TA	TO-261-4 TO-261AA	100	500 mV	2 A	2 W	NPN	Surface Mount	175 MHz	-55 °C	150 °C	100 nA	100 V	SOT-223-3
Diodes Inc FZT653TC	TO-261-4 TO-261AA	100	500 mV	2 A	2 W	NPN	Surface Mount	175 MHz	-55 °C	150 °C	100 nA	100 V	SOT-223-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN, 100V, 2A, SOT223

Technical documentation and resources