IXFN32N120P

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IXYS

MOSFET N-CH 1200V 32A SOT-227B

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IXYS

MOSFET N-CH 1200V 32A SOT-227B

Technical Specifications

Parameters and characteristics for this part

Specification	IXFN32N120P

Current - Continuous Drain (Id) @ 25°C	32 A
Drain to Source Voltage (Vdss)	1200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	360 nC
Input Capacitance (Ciss) (Max) @ Vds	21000 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Power Dissipation (Max) [Max]	1000 W
Rds On (Max) @ Id, Vgs	310 mOhm
Supplier Device Package	SOT-227B
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	6.5 V

Part	FET Type	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Technology	Package / Case	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Power Dissipation (Max) [Max]
IXYS IXFN32N120	N-Channel	Chassis Mount	400 nC	5 V	SOT-227B	15900 pF	32 A	MOSFET (Metal Oxide)	SOT-227-4 miniBLOC	350 mOhm	1200 V
IXYS IXFN32N120P	N-Channel	Chassis Mount		6.5 V	SOT-227B	21000 pF	32 A	MOSFET (Metal Oxide)	SOT-227-4 miniBLOC	310 mOhm	1200 V	360 nC	10 V	-55 °C	150 °C	30 V	1000 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 1200 V 32A (Tc) 1000W (Tc) Chassis Mount SOT-227B

Technical documentation and resources

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