HN4A06J(TE85L,F)

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Toshiba Semiconductor and Storage

TRANS 2PNP 120V 0.1A SMV

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Toshiba Semiconductor and Storage

TRANS 2PNP 120V 0.1A SMV

Technical Specifications

Parameters and characteristics for this part

Specification	HN4A06J(TE85L,F)

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce	200 hFE
Frequency - Transition	100 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-74A, SOT-753
Power - Max [Max]	300 mW
Supplier Device Package	SMV
Transistor Type	2 PNP (Dual) Matched Pair, Common Emitter
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max)	120 V

Part	Frequency - Transition	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Mounting Type	Transistor Type	Power - Max [Max]	Operating Temperature	Current - Collector (Ic) (Max) [Max]	Package / Case	Supplier Device Package	DC Current Gain (hFE) (Min) @ Ic, Vce	Voltage - Collector Emitter Breakdown (Max)
Toshiba Semiconductor and Storage HN4A06J(TE85L,F)	100 MHz	300 mV	100 nA	Surface Mount	2 PNP (Dual) Matched Pair Common Emitter	300 mW	150 °C	100 mA	SC-74A SOT-753	SMV	200 hFE	120 V

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General part information

Bipolar (BJT) Transistor Array 2 PNP (Dual) Matched Pair, Common Emitter 120V 100mA 100MHz 300mW Surface Mount SMV

Technical documentation and resources