IPA083N10NM5SXKSA1
ActiveINFINEON'S OPTIMOS™ 5 POWER MOSFET 100V IN TO-220 FULLPAK PACKAGE (IPA083N10NM5S)
Deep-Dive with AI
Search across all available documentation for this part.
IPA083N10NM5SXKSA1
ActiveINFINEON'S OPTIMOS™ 5 POWER MOSFET 100V IN TO-220 FULLPAK PACKAGE (IPA083N10NM5S)
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IPA083N10NM5SXKSA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 50 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 40 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-220-3 Full Pack |
| Power Dissipation (Max) | 36 W |
| Rds On (Max) @ Id, Vgs [Max] | 8.3 mOhm |
| Supplier Device Package | PG-TO220 Full Pack |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPA083 Series
Infineon’s power MOSFET 100V in TO-220 FullPAK package (IPA083N10NM5S) meets the requirements for improved system efficiency and at the same time reduces system costs. Infineon’sOptiMOS™ power MOSFETfeatures low RDS(on)of 8.3mOhm improving efficiency. In addition, with its increased power density the new TO-220 FullPAK portfolio extension is the excellent solution for synchronous rectification. It is optimized for TV, desktop, adapter and gaming applications.
Documents
Technical documentation and resources