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ZVN4206ASTZ - Diodes Incorporated-ZTX601STZ Darlington BJT Trans Darlington NPN 160V 1A 1000mW 3-Pin E-Line Box

ZVN4206ASTZ

Active
Diodes Inc

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

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ZVN4206ASTZ - Diodes Incorporated-ZTX601STZ Darlington BJT Trans Darlington NPN 160V 1A 1000mW 3-Pin E-Line Box

ZVN4206ASTZ

Active
Diodes Inc

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationZVN4206ASTZ
Current - Continuous Drain (Id) @ 25°C600 mA
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]10 V
Drive Voltage (Max Rds On, Min Rds On) [Min]5 V
FET TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds100 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseE-Line-3
Power Dissipation (Max)700 mW
Rds On (Max) @ Id, Vgs1 Ohm
Supplier Device PackageE-Line (TO-92 compatible)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 2000$ 0.30
4000$ 0.28
6000$ 0.27
10000$ 0.25
14000$ 0.25

Description

General part information

ZVN4206GV Series

N-Channel Enhancement Mode Vertical DMOS FET