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RN2119MFV(TPL3) - VESM

RN2119MFV(TPL3)

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Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A VESM

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RN2119MFV(TPL3) - VESM

RN2119MFV(TPL3)

Active
Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A VESM

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationRN2119MFV(TPL3)
Current - Collector (Ic) (Max) [Max]100 mA
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]120
Mounting TypeSurface Mount
Package / CaseSOT-723
Power - Max [Max]150 mW
Resistor - Base (R1)1 kOhms
Supplier Device PackageVESM
Transistor TypePNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.23
10$ 0.14
100$ 0.09
500$ 0.06
1000$ 0.06
2000$ 0.05
Digi-Reel® 1$ 0.23
10$ 0.14
100$ 0.09
500$ 0.06
1000$ 0.06
2000$ 0.05

Description

General part information

RN2119 Series

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 150 mW Surface Mount VESM

Documents

Technical documentation and resources

No documents available