IXFX24N100F

Obsolete

IXYS

MOSFET N-CH 1000V 24A PLUS247-3

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Obsolete

IXYS

MOSFET N-CH 1000V 24A PLUS247-3

Technical Specifications

Parameters and characteristics for this part

Specification	IXFX24N100F

Current - Continuous Drain (Id) @ 25°C	24 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	195 nC
Input Capacitance (Ciss) (Max) @ Vds	6600 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	560 W
Rds On (Max) @ Id, Vgs	390 mOhm
Supplier Device Package	PLUS247™-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5.5 V

Part	Drain to Source Voltage (Vdss)	Vgs (Max)	FET Type	Power Dissipation (Max)	Package / Case	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Technology	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs
IXYS IXFX24N90Q	900 V	20 V	N-Channel	500 W	TO-247-3 Variant	4.5 V	-55 °C	150 °C	Through Hole	MOSFET (Metal Oxide)	5900 pF	10 V	450 mOhm	PLUS247™-3	170 nC	24 A
IXYS IXFX24N100F	1000 V	20 V	N-Channel		TO-247-3	5.5 V	-55 °C	150 °C	Through Hole	MOSFET (Metal Oxide)	6600 pF	10 V		PLUS247™-3		24 A	195 nC	560 W	390 mOhm
IXYS IXFX24N100	1000 V	20 V	N-Channel		TO-247-3 Variant	5.5 V	-55 °C	150 °C	Through Hole	MOSFET (Metal Oxide)	8700 pF	10 V		PLUS247™-3	267 nC	24 A		560 W	390 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 1000 V 24A (Tc) 560W (Tc) Through Hole PLUS247™-3

Technical documentation and resources

No documents available