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R6009JNJGTL

R6009JNJGTL

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Rohm Semiconductor

600V 9A TO-263, PRESTOMOS™ WITH INTEGRATED HIGH-SPEED DIODE

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R6009JNJGTL

R6009JNJGTL

Active
Rohm Semiconductor

600V 9A TO-263, PRESTOMOS™ WITH INTEGRATED HIGH-SPEED DIODE

Find alt

Description

General part information

R6009JNJ Series

R6009JNJ is a power MOSFET with fast reverse recovery time (trr), suitable for the switching applications.PrestoMOS™ series, R60xxJNx series increases design flexibility while maintaining the industry’s fastest reverse recovery time (trr) optimized for EV charging stations and motor drive in home appliances such as refrigerators and Air Conditioners (ACs).

Technical Specifications

Parameters and characteristics for this part

SpecificationR6009JNJGTL
Current - Continuous Drain (Id) (Tc)9 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)15 V
FET TypeN-Channel
Gate Charge (Max)22 nC
Input Capacitance (Ciss) (Max)645 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package NameLPTS
Power Dissipation (Max)125 W
Rds On (Max)585 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max)7 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

Precautions When Measuring the Rear of the Package with a Thermocouple
How to Use LTspice® Models
MOSFET Gate Drive Current Setting for Motor Driving
Reliability Test Result
Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)
Notes for Temperature Measurement Using Forward Voltage of PN Junction
Basics of Thermal Resistance and Heat Dissipation
θ<sub>JC</sub> and Ψ<sub>JT</sub>
R6009JNJ ESD Data
R6009JNJ Data Sheet
θ<sub>JA</sub> and Ψ<sub>JT</sub>
Method for Calculating Junction Temperature from Transient Thermal Resistance Data
Notes for Temperature Measurement Using Thermocouples
Part Explanation
Judgment Criteria of Thermal Evaluation
Condition of Soldering / Land Pattern Reference
Taping Information
Measurement Method and Usage of Thermal Resistance RthJC
MOSFET Gate Resistor Setting for Motor Driving
Types and Features of Transistors
Power Eco Family: Overview of ROHM's Power Semiconductor Lineup
Compliance of the RoHS directive
About Export Regulations
About Flammability of Materials
What is a Thermal Model? (Transistor)
What Is Thermal Design
Temperature derating method for Safe Operating Area (SOA)
Explanation for Marking
How to Create Symbols for PSpice Models
Report of SVHC under REACH Regulation
Benefits given by PrestoMOS&trade; series for the Phase-Shift Full-Bridge
Inner Structure
Notes for Calculating Power Consumption:Static Operation
Anti-Whisker formation - Transistors
How to Use the Thermal Resistance and Thermal Characteristics Parameters
PCB Layout Thermal Design Guide
List of Transistor Package Thermal Resistance
Importance of Probe Calibration When Measuring Power: Deskew
Package Dimensions
Moisture Sensitivity Level - Transistors
How to Use LTspice&reg; Models: Tips for Improving Convergence
Method for Monitoring Switching Waveform
Double-pulse test substantiated advantages of PrestoMOS&trade;
Calculation of Power Dissipation in Switching Circuit
Impedance Characteristics of Bypass Capacitor
Two-Resistor Model for Thermal Simulation
Technical Data Sheet EN