TK3R1P04PL,RQ

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Toshiba Semiconductor and Storage

MOSFET N-CHANNEL 40V 58A DPAK

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Toshiba Semiconductor and Storage

MOSFET N-CHANNEL 40V 58A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	TK3R1P04PL,RQ

Current - Continuous Drain (Id) @ 25°C	58 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	60 nC
Input Capacitance (Ciss) (Max) @ Vds	4670 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	87 W
Rds On (Max) @ Id, Vgs	3.1 mOhm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.4 V

Part	Mounting Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Vgs(th) (Max) @ Id	Operating Temperature	Technology	Drive Voltage (Max Rds On, Min Rds On)
Toshiba Semiconductor and Storage TK3R1P04PL,RQ	Surface Mount	40 V	4670 pF	20 V	58 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	3.1 mOhm	87 W	DPAK	60 nC	N-Channel	2.4 V	175 °C	MOSFET (Metal Oxide)	4.5 V 10 V

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General part information

N-Channel 40 V 58A (Tc) 87W (Tc) Surface Mount DPAK

Technical documentation and resources