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TK3R1P04PL,RQ

TK3R1P04PL,RQ

Active
Toshiba Semiconductor and Storage

12V - 300V MOSFETS, N-CH MOSFET, 40 V, 0.0031 Ω@10V, DPAK, U-MOSⅨ-H

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TK3R1P04PL,RQ

TK3R1P04PL,RQ

Active
Toshiba Semiconductor and Storage

12V - 300V MOSFETS, N-CH MOSFET, 40 V, 0.0031 Ω@10V, DPAK, U-MOSⅨ-H

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Description

General part information

TK3R1P04PL Series

N-Channel 40 V 58A (Tc) 87W (Tc) Surface Mount DPAK

Technical Specifications

Parameters and characteristics for this part

SpecificationTK3R1P04PL,RQ
Current - Continuous Drain (Id) (Tc)58 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On)4.5 V
Drive Voltage (Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)60 nC
Input Capacitance (Ciss) (Max)4670 pF
Mounting TypeSurface Mount
Operating Temperature175 °C
Package / CaseSC-63, DPAK (2 Leads + Tab), TO-252-3
Package NameDPak
Power Dissipation (Max)87 W
Rds On (Max)3.1 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max)2.4 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

TK3R1P04PL,RQ | Datasheet
Datasheet
MOSFET Avalanche Ruggedness: Power MOSFET Application Notes
Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
Motor Control (Vacuum Cleaners)
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
Calculating the Temperature of Discrete Semiconductor Devices
Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes
TK3R1P04PL Data sheet/Japanese
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
Reverse Recovery Operation and Destruction of MOSFET Body Diode
RC Snubbers for Step-Down Converters
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter
Derating of the MOSFET Safe Operating Area
MOSFET Gate Drive Circuit: Power MOSFET Application Notes
Simplified CFD Model Application Note
Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes
Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes
Resonant Circuits and Soft Switching
Structures and Characteristics: Power MOSFET Application Notes
Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes
MOSFET Secondary Breakdown
Maximum Ratings: Power MOSFET Application Notes
Parasitic Oscillation and Ringing: Power MOSFET Application Notes
Avalanche energy calculation
MOSFET Self-Turn-On Phenomenon
Hints and Tips for Thermal Design part3
MOSFET SPICE model grade
Selection Guide MOSFETs 2025 Rev1.0
Hints and Tips for Thermal Design for Discrete Semiconductor Devices
Electrical Characteristics: Power MOSFET Application Notes