STTH1212G

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STMicroelectronics

DIODE GEN PURP 1.2KV 12A D2PAK

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STMicroelectronics

DIODE GEN PURP 1.2KV 12A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	STTH1212G

Current - Average Rectified (Io)	12 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Speed	200 mA, 500 ns
Supplier Device Package	D2PAK
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	2.2 V

DIODE GEN PURP 1.2KV 12A D2PAK

Part	Supplier Device Package	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Current - Average Rectified (Io)	Technology	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Package / Case
STMicroelectronics STTH1212G	D2PAK	10 µA	175 °C	1.2 kV	200 mA, 500 ns	12 A	Standard	2.2 V	Surface Mount	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 1200 V 12A Surface Mount D2PAK

Technical documentation and resources