CSFA105-G

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Comchip Technology

DIODE GEN PURP 600V 1A DO214AC

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Comchip Technology

DIODE GEN PURP 600V 1A DO214AC

Technical Specifications

Parameters and characteristics for this part

Specification	CSFA105-G

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	DO-214AC, SMA
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-214AC (SMA)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V

DIODE GEN PURP 600V 1A DO214AC

Part	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Technology	Speed	Package / Case
Comchip Technology CSFA105-G	5 µA	1 A	150 °C	-55 °C	Surface Mount	DO-214AC (SMA)	600 V	35 ns	Standard	200 mA, 500 ns	DO-214AC, SMA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 600 V 1A Surface Mount DO-214AC (SMA)

Technical documentation and resources

No documents available