IXTA8N50P

Obsolete

IXYS

MOSFET N-CH 500V 8A TO263

Search across all available documentation for this part.

Obsolete

IXYS

MOSFET N-CH 500V 8A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	IXTA8N50P

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [x]	20 nC
Input Capacitance (Ciss) (Max) @ Vds	1050 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	150 W
Rds On (Max) @ Id, Vgs	800 mOhm
Supplier Device Package	TO-263AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5.5 V

Part	Mounting Type	Supplier Device Package	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [x]	Drain to Source Voltage (Vdss)	Vgs (Max)	Technology	Rds On (Max) @ Id, Vgs	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]
IXYS IXTA8N50P	Surface Mount	TO-263AA	150 W	8 A	5.5 V	1050 pF	N-Channel	10 V	20 nC	500 V	30 V	MOSFET (Metal Oxide)	800 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 8A (Tc) 150W (Tc) Surface Mount TO-263AA

Technical documentation and resources

No documents available