Technical Specifications
Parameters and characteristics for this part
| Specification | FMMT411FDBW-7 |
|---|---|
| Current - Collector (Ic) (Max) | 5 A |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 100 |
| Frequency - Transition | 110 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 3-UDFN Exposed Pad |
| Power - Max [Max] | 1.7 W |
| Supplier Device Package | W-DFN2020-3 (Type A) |
| Transistor Type | NPN - Avalanche Mode |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 3000 | $ 1.31 | |
Description
General part information
FMMT411FDBW Series
The FMMT411FDBW is a silicon planar bipolar transistor designed for operating in avalanche mode. Tight process control and low inductance packaging combine to produce high on current pulses with fast edges.
Documents
Technical documentation and resources