CSD16322Q5

Active

Texas Instruments

25-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 5.8 MOHM

Search across all available documentation for this part.

Active

Texas Instruments

25-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE SON 5 MM X 6 MM, 5.8 MOHM

Technical Specifications

Parameters and characteristics for this part

Specification	CSD16322Q5

Current - Continuous Drain (Id) @ 25°C	21 A, 97 A
Drain to Source Voltage (Vdss)	25 V
Drive Voltage (Max Rds On, Min Rds On)	3 V, 8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9.7 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1365 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	3.1 W
Rds On (Max) @ Id, Vgs	5 mOhm
Supplier Device Package	8-VSON-CLIP (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V, -8 V
Vgs(th) (Max) @ Id	1.4 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 5.8 mOhm

Part	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Power Dissipation (Max)	Mounting Type	FET Type	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Technology	Drain to Source Voltage (Vdss)	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C
Texas Instruments CSD16322Q5	8-PowerTDFN	9.7 nC	-8 V, 10 V	3.1 W	Surface Mount	N-Channel	1.4 V	3 V, 8 V	MOSFET (Metal Oxide)	25 V	150 °C	-55 °C	8-VSON-CLIP (5x6)	1365 pF	5 mOhm	21 A, 97 A

General part information

The NexFET™ power MOSFET has been designed to minimize losses in power conversion applications and optimized for 5 V gate drive applications.

Technical documentation and resources