IXFH50N50P3

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LITTELFUSE

DISCMSFT NCHHIPERFET-POLAR3 TO-247AD/ TUBE

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IXFH50N50P3

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LITTELFUSE

DISCMSFT NCHHIPERFET-POLAR3 TO-247AD/ TUBE

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Description Specifications Series Pricing CAD Documents

Description

General part information

IXFH50 Series

The Q3-Class series Power MOSFETs provide the end-user with a broad range of devices that demonstrate exceptional power switching performance, excellent thermal characteristics, enhanced device ruggedness, and high energy efficiency. Available with drain-to-source voltage ratings of 200V–1000V and drain current ratings of 10A–100A, the Q3-Class series features an optimized combination of low on-state resistance (Rdson) and gate charge (Qg), resulting in a substantial reduction in both the conduction and switching loss of the device. Power switching capabilities and device ruggedness are further enhanced through the utilization of our proven HiPerFETTM process, yielding a device with a fast intrinsic rectifier which provides for low reverse recovery charge (Qrr) while enhancing the commutating dV/dt ratings (up to 50V/ns) of the device. Advantages: Easy to Mount High Power Density Space savings

Technical Specifications

Parameters and characteristics for this part

Specification	IXFH50N50P3

Current - Continuous Drain (Id) (Tc)	50 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	85 nC
Input Capacitance (Ciss) (Max)	4335 pF, 4335 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-247-3
Package Name	TO-247AD (IXFH)
Power Dissipation (Max)	960 W
Rds On (Max)	120 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	5 V

IXFH50 Series

DiscMSFT NCh UltrJnctn XClass TO-247AD

Part	Drive Voltage (Max Rds On, Min Rds On)	Technology	Rds On (Max)	Package / Case	Package Name	Vgs(th) (Max)	Power Dissipation (Max)	Mounting Type	Gate Charge (Max)	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	FET Type	Vgs (Max)	Drain to Source Voltage (Vdss)
LITTELFUSE IXFH50N60P3	10 V	MOSFET (Metal Oxide)	145 mOhm	TO-247-3	TO-247AD (IXFH)	5 V	1040 W	Through Hole	94 nC	50 A	-55 °C	150 °C	6300 pF	N-Channel	30 V	600 V
LITTELFUSE IXFH50N30Q3	10 V	MOSFET (Metal Oxide)	80 mOhm	TO-247-3	TO-247AD (IXFH)	6.5 V	690 W	Through Hole	65 nC 65 nC	50 A	-55 °C	150 °C	3160 pF	N-Channel	20 V	300 V
LITTELFUSE IXFH50N60X	10 V	MOSFET (Metal Oxide)	73 mOhm 73 mOhm	TO-247-3	TO-247 (IXTH)	4.5 V	660 W	Through Hole	116 nC	50 A	-55 °C	150 °C	4660 pF	N-Channel	30 V	600 V
LITTELFUSE IXFH50N85X	10 V	MOSFET (Metal Oxide)	105 mOhm	TO-247-3	TO-247 (IXTH)	5.5 V	890 W	Through Hole	152 nC	50 A	-55 °C	150 °C	4480 pF	N-Channel	30 V	850 V
LITTELFUSE IXFH50N20	10 V	MOSFET (Metal Oxide)	45 mOhm	TO-247-3	TO-247AD (IXFH)	4 V	300 W	Through Hole	220 nC	50 A	-55 °C	150 °C	4400 pF	N-Channel	20 V	200 V
LITTELFUSE IXFH50N30Q3	10 V	MOSFET (Metal Oxide)	80 mOhm	TO-247-3	TO-247AD (IXFH)	6.5 V	690 W	Through Hole	65 nC 65 nC	50 A	-55 °C	150 °C	3160 pF	N-Channel	20 V	300 V
LITTELFUSE IXFH50N50P3	10 V	MOSFET (Metal Oxide)	120 mOhm	TO-247-3	TO-247AD (IXFH)	5 V	960 W	Through Hole	85 nC	50 A	-55 °C	150 °C	4335 pF 4335 pF	N-Channel	30 V	500 V
LITTELFUSE IXFH50N85X	10 V	MOSFET (Metal Oxide)	105 mOhm	TO-247-3	TO-247 (IXTH)	5.5 V	890 W	Through Hole	152 nC	50 A	-55 °C	150 °C	4480 pF	N-Channel	30 V	850 V
LITTELFUSE IXFH50N60P3	10 V	MOSFET (Metal Oxide)	160 mOhm	TO-247-3	TO-247AD (IXFH)	5 V	1040 W	Through Hole	94 nC	50 A	-55 °C	150 °C	6300 pF	N-Channel	30 V	600 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

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IXFH50N50P3 | Datasheet

Datasheet