IPI80N06S2L05AKSA1

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Infineon Technologies

MOSFET N-CH 55V 80A TO262-3

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IPI80N06S2L05AKSA1

Unknown

Infineon Technologies

MOSFET N-CH 55V 80A TO262-3

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPI80N06S2L05AKSA1

Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	230 nC
Input Capacitance (Ciss) (Max) @ Vds	5700 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs	4.8 mOhm
Supplier Device Package	PG-TO262-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

IPI80N Series

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Supplier Device Package	FET Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]
Infineon Technologies IPI80N06S208AKSA1	96 nC	MOSFET (Metal Oxide)	2860 pF	-55 °C	175 ░C	215 W	PG-TO262-3	N-Channel	20 V	55 V	Through Hole	8 mOhm	4 V	10 V	I2PAK TO-262-3 Long Leads TO-262AA
Infineon Technologies IPI80N06S2L11AKSA1		MOSFET (Metal Oxide)	2075 pF	-55 °C	175 ░C	158 W	PG-TO262-3	N-Channel	20 V	55 V	Through Hole	11 mOhm		10 V	I2PAK TO-262-3 Long Leads TO-262AA	80 nC
Infineon Technologies IPI80N06S407AKSA1		MOSFET (Metal Oxide)	4500 pF	-55 °C	175 ░C	79 W	PG-TO262-3	N-Channel	20 V	60 V	Through Hole	7.4 mOhm	4 V	10 V	I2PAK TO-262-3 Long Leads TO-262AA	56 nC
Infineon Technologies IPI80N04S303AKSA1	110 nC	MOSFET (Metal Oxide)		-55 °C	175 ░C	188 W	PG-TO262-3	N-Channel	20 V	40 V	Through Hole	3.5 mOhm	4 V	10 V	I2PAK TO-262-3 Long Leads TO-262AA		7300 pF
Infineon Technologies IPI80N06S2L05AKSA2	230 nC	MOSFET (Metal Oxide)	5700 pF	-55 °C	175 ░C			N-Channel	20 V	55 V	Through Hole	4.8 mOhm	2 V	10 V	I2PAK TO-262-3 Long Leads TO-262AA			300 W
Infineon Technologies IPI80N06S405AKSA1		MOSFET (Metal Oxide)	6500 pF	-55 °C	175 ░C	107 W	PG-TO262-3	N-Channel	20 V	60 V	Through Hole	5.7 mOhm	4 V	10 V	I2PAK TO-262-3 Long Leads TO-262AA	81 nC
Infineon Technologies IPI80N06S2L05AKSA1	230 nC	MOSFET (Metal Oxide)	5700 pF	-55 °C	175 ░C		PG-TO262-3	N-Channel	20 V	55 V	Through Hole	4.8 mOhm	2 V	10 V	I2PAK TO-262-3 Long Leads TO-262AA			300 W
Infineon Technologies IPI80N06S3-05	240 nC	MOSFET (Metal Oxide)	10760 pF	-55 °C	175 ░C		PG-TO262-3	N-Channel	20 V	55 V	Through Hole	5.4 mOhm	4 V	10 V	I2PAK TO-262-3 Long Leads TO-262AA			165 W
Infineon Technologies IPI80N06S4L05AKSA1	110 nC	MOSFET (Metal Oxide)		-55 °C	175 ░C	107 W	PG-TO262-3	N-Channel	16 V	60 V	Through Hole	5.1 mOhm	2.2 V	4.5 V 10 V	I2PAK TO-262-3 Long Leads TO-262AA		8180 pF
Infineon Technologies IPI80N04S4L04AKSA1	60 nC	MOSFET (Metal Oxide)	4690 pF	-55 °C	175 ░C	71 W	PG-TO262-3	N-Channel	-16 V 20 V	40 V	Through Hole	4.3 mOhm	2.2 V	4.5 V 10 V	I2PAK TO-262-3 Long Leads TO-262AA

Pricing

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Distributor	Package	Quantity	$

Description

General part information

IPI80N Series

N-Channel 55 V 80A (Tc) 300W (Tc) Through Hole PG-TO262-3

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