SIDC05D60C8X1SA1

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Infineon Technologies

DIODE GEN PURP 600V 15A DIE

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Infineon Technologies

DIODE GEN PURP 600V 15A DIE

Technical Specifications

Parameters and characteristics for this part

Specification	SIDC05D60C8X1SA1

Current - Average Rectified (Io)	15 A
Current - Reverse Leakage @ Vr	27 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	Die
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	Die
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.95 V

Part	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Current - Average Rectified (Io)	Package / Case	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Speed	Speed	Technology
Infineon Technologies SIDC05D60C8X1SA1	Die	600 V	27 µA	-40 °C	175 ░C	15 A	Die	1.95 V	Surface Mount	Standard Recovery >500ns	200 mA	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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General part information

Diode 600 V 15A Surface Mount Die

Technical documentation and resources