CSFMT108-HF

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Comchip Technology

DIODE GEN PURP 600V 1A SOD123H

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Comchip Technology

DIODE GEN PURP 600V 1A SOD123H

Technical Specifications

Parameters and characteristics for this part

Specification	CSFMT108-HF

Capacitance @ Vr, F	10 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SOD-123H
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	SOD-123H
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

DIODE GEN PURP 600V 1A SOD123H

Part	Package / Case	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Reverse Recovery Time (trr)	Voltage - Forward (Vf) (Max) @ If	Technology	Speed	Supplier Device Package	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]
Comchip Technology CSFMT108-HF	SOD-123H	1 A	5 µA	150 °C	-55 °C	Surface Mount	35 ns	1.7 V	Standard	200 mA, 500 ns	SOD-123H	10 pF	600 V

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General part information

Diode 600 V 1A Surface Mount SOD-123H

Technical documentation and resources

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