BFR181E6327HTSA1

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Infineon Technologies

BIPOLAR - RF TRANSISTOR, NPN, 12 V, 8 GHZ, 175 MW, 20 MA, 70 ROHS COMPLIANT: YES

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Infineon Technologies

BIPOLAR - RF TRANSISTOR, NPN, 12 V, 8 GHZ, 175 MW, 20 MA, 70 ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

Specification	BFR181E6327HTSA1

Current - Collector (Ic) (Max) [Max]	20 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	70
Frequency - Transition	8 GHz
Gain	18.5 dBi
Mounting Type	Surface Mount
Noise Figure (dB Typ @ f) [Max]	1.2 dB
Noise Figure (dB Typ @ f) [Min]	0.9 dB
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power - Max [Max]	175 mW
Supplier Device Package	PG-SOT23
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12 V

Part	Gain	Transistor Type	Frequency - Transition	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Voltage - Collector Emitter Breakdown (Max)	Power - Max [Max]	Mounting Type	Package / Case	Noise Figure (dB Typ @ f) [Min]	Noise Figure (dB Typ @ f) [Max]
Infineon Technologies BFR181E6327HTSA1	18.5 dBi	NPN	8 GHz	PG-SOT23	20 mA	150 °C	70	12 V	175 mW	Surface Mount	SC-59 SOT-23-3 TO-236-3	0.9 dB	1.2 dB

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN Silicon RF Transistor for low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA

Technical documentation and resources

No documents available