DMN3150L-7

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Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 3.8A I(D), 30V, 0.054OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, GREEN, PLASTIC PACKAGE-3

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Active

Diodes Inc

POWER FIELD-EFFECT TRANSISTOR, 3.8A I(D), 30V, 0.054OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, GREEN, PLASTIC PACKAGE-3

Technical Specifications

Parameters and characteristics for this part

Specification	DMN3150L-7

Current - Continuous Drain (Id) @ 25°C	3.8 A
Drain to Source Voltage (Vdss)	28 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	1.4 W
Rds On (Max) @ Id, Vgs [Max]	85 mOhm
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.4 V

N-Channel Enhancement Mode MOSFET

Part	Drain to Source Voltage (Vdss)	Technology	FET Type	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Rds On (Max) @ Id, Vgs [Max]	Power Dissipation (Max)
Diodes Inc DMN3150LW-7	28 V	MOSFET (Metal Oxide)	N-Channel	Surface Mount	2.5 V 4.5 V	1.4 V	SOT-323	1.6 A	SC-70 SOT-323	12 V	88 mOhm	-55 °C	150 °C	350 mW
Diodes Inc DMN3150L-7	28 V	MOSFET (Metal Oxide)	N-Channel	Surface Mount		1.4 V	SOT-23-3	3.8 A	SC-59 SOT-23-3 TO-236-3	12 V		-55 °C	150 °C		10 V	2.5 V	85 mOhm	1.4 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel Enhancement Mode MOSFET

Technical documentation and resources