RGW00TS65CHRC11

Obsolete

Rohm Semiconductor

HIGH-SPEED FAST SWITCHING TYPE, 650V 50A, AUTOMOTIVE HYBRID IGBT WITH BUILT-IN SIC-SBD

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RGW00TS65CHRC11

Obsolete

Rohm Semiconductor

HIGH-SPEED FAST SWITCHING TYPE, 650V 50A, AUTOMOTIVE HYBRID IGBT WITH BUILT-IN SIC-SBD

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Description Specifications Series Pricing CAD Documents

Description

General part information

RGW00 Series

The RGWxx65C series is a 650V IGBT with a built-in SiC schottky barrier diode, which reduces turn-on switching loss. This is an AEC-Q101 compliant product. It can be used with confidence even in harsh environments such as xEV on-board chargers, DC/DC converters, solar power conditioners, and UPS.

Technical Specifications

Parameters and characteristics for this part

Specification	RGW00TS65CHRC11

Current - Collector (Ic) (Max)	96 A
Current - Collector Pulsed (Icm)	200 A
Gate Charge	141 nC
Input Type	Standard
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-40 °C
Package / Case	TO-247-3
Package Name	TO-247N
Power - Max	254 W
Reverse Recovery Time (trr)	33 ns
Switching Energy (Off)	420 µJ
Switching Energy (On)	180 µJ
Td (off) @ 25°C	180 ns
Td (on) @ 25°C	49 ns
Test Condition Current	25 A
Test Condition Resistance	10 Ohm
Test Condition Voltage	400 V
Test Condition Voltage (Secondary)	15 V
Vce(on) (Max)	1.9 V
Voltage - Collector Emitter Breakdown (Max)	650 V

RGW00 Series

High-Speed Fast Switching Type, 650V 50A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive

Part	Vce(on) (Max)	Operating Temperature (Max)	Operating Temperature (Min)	Voltage - Collector Emitter Breakdown (Max)	Mounting Type	Power - Max	Current - Collector Pulsed (Icm)	IGBT Type	Td (off) @ 25°C	Td (on) @ 25°C	Input Type	Package Name	Switching Energy (On)	Switching Energy (Off)	Current - Collector (Ic) (Max)	Package / Case	Test Condition Voltage	Test Condition Resistance	Test Condition Current	Test Condition Voltage (Secondary)	Gate Charge	Reverse Recovery Time (trr)
Rohm Semiconductor RGW00TS65GC11	1.9 V	175 °C	-40 °C	650 V	Through Hole	254 W	200 A	Trench Field Stop	180 ns	52 ns	Standard	TO-247N	1.18 mJ	960 µJ	96 A	TO-247-3	400 V	10 Ohm	50 A	15 V	141 nC
Rohm Semiconductor RGW00TS65DGC11	1.9 V	175 °C	-40 °C	650 V	Through Hole	254 W	200 A	Trench Field Stop	180 ns	52 ns	Standard	TO-247N	1.18 mJ	960 µJ	96 A	TO-247-3	400 V	10 Ohm	50 A	15 V	141 nC	95 ns
Rohm Semiconductor RGW00TS65CHRC11	1.9 V	175 °C	-40 °C	650 V	Through Hole	254 W	200 A		180 ns	49 ns	Standard	TO-247N	180 µJ	420 µJ	96 A	TO-247-3	400 V	10 Ohm	25 A	15 V	141 nC	33 ns
Rohm Semiconductor RGW00TS65EHRC11	1.9 V	175 °C	-40 °C	650 V	Through Hole	254 W	200 A	Trench Field Stop	183 ns	50 ns	Standard	TO-247N			96 A	TO-247-3	400 V	10 Ohm	25 A	15 V	141 nC	90 ns
Rohm Semiconductor RGW00TS65HRC11	1.9 V	175 °C	-40 °C	650 V	Through Hole	254 W	200 A	Trench Field Stop	186 ns	48 ns	Standard	TO-247N			96 A	TO-247-3	400 V	10 Ohm	25 A	15 V	141 nC
Rohm Semiconductor RGW00TS65DHRC11	1.9 V	175 °C	-40 °C	650 V	Through Hole	254 W	200 A	Trench Field Stop	186 ns	48 ns	Standard	TO-247N			96 A	TO-247-3	400 V	10 Ohm	25 A	15 V	141 nC	90 ns