Specification	SISH103DN-T1-GE3

Current - Continuous Drain (Id) (Ta)	16 A
Current - Continuous Drain (Id) (Tc)	54 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	72 nC
Input Capacitance (Ciss) (Max)	2540 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8SH
Package Name	PowerPAK® 1212-8SH
Power Dissipation (Max)	41.6 W, 3.67 W
Rds On (Max)	155 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max)	2.5 V

SISH103 Series

Part	Power Dissipation (Max)	Vgs(th) (Max)	Mounting Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs (Max)	Technology	FET Type	Rds On (Max)	Package / Case	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Ta)	Package Name	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Input Capacitance (Ciss) (Max)	Gate Charge (Max)
Vishay Dale SISH103DN-T1-GE3	3.67 W 41.6 W	2.5 V	Surface Mount	10 V	4.5 V	25 V	MOSFET (Metal Oxide)	P-Channel	155 mOhm	PowerPAK® 1212-8SH	54 A	16 A	PowerPAK® 1212-8SH	30 V	-55 °C	150 °C	2540 pF	72 nC

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